NVTYS010N06CLTWG onsemi
Виробник: onsemiDescription: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2070 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.97 грн |
| 10+ | 57.70 грн |
| 100+ | 40.17 грн |
| 500+ | 30.32 грн |
| 1000+ | 27.90 грн |
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Технічний опис NVTYS010N06CLTWG onsemi
Description: T6 60V N-CH LL IN LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc), Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V, Power Dissipation (Max): 3.1W (Ta), 47W (Tc), Vgs(th) (Max) @ Id: 2V @ 35µA, Supplier Device Package: 8-LFPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVTYS010N06CLTWG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NVTYS010N06CLTWG | Виробник : ON Semiconductor |
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| NVTYS010N06CLTWG | Виробник : ONSEMI |
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NVTYS010N06CLTWG | Виробник : onsemi |
Description: T6 60V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 47W (Tc) Vgs(th) (Max) @ Id: 2V @ 35µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| NVTYS010N06CLTWG | Виробник : onsemi |
MOSFETs T6 60V N-CH LL IN LFPAK33 PACKAGE |
товару немає в наявності |