на замовлення 3000 шт:
термін постачання 140-149 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 83.86 грн |
| 10+ | 67.51 грн |
| 100+ | 45.69 грн |
| 500+ | 38.70 грн |
| 1000+ | 33.11 грн |
| 3000+ | 28.03 грн |
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Технічний опис NVTYS014N08HLTWG onsemi
Description: T8 80V N-CH LL IN LFPAK33 PACKAG, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V, Power Dissipation (Max): 3W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 45µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції NVTYS014N08HLTWG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NVTYS014N08HLTWG | Виробник : onsemi |
 Description: T8 80V N-CH LL IN LFPAK33 PACKAGPackaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 45µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
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NVTYS014N08HLTWG | Виробник : onsemi |
Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 45µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |