на замовлення 2990 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 115.01 грн |
| 100+ | 105.75 грн |
| 500+ | 77.98 грн |
| 1000+ | 66.43 грн |
| 3000+ | 25.01 грн |
| 6000+ | 24.94 грн |
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Технічний опис NVTYS020N08HLTWG onsemi
Description: T8 80V N-CH LL IN LFPAK33 PACKAG, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V, Power Dissipation (Max): 3.2W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2V @ 30µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 610.5 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції NVTYS020N08HLTWG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NVTYS020N08HLTWG | Виробник : onsemi |
 Description: T8 80V N-CH LL IN LFPAK33 PACKAGPackaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610.5 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
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NVTYS020N08HLTWG | Виробник : onsemi |
Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610.5 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |