NVVR26A120M1WSB onsemi

Description: MOSFET 2N-CH 1200V AHPM15-CDE, Packaging: Tube, Package / Case: 15-PowerDIP Module (2.441", 62.00mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1kW (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 400A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 3.2V @ 150mA, Supplier Device Package: AHPM15-CDE, Grade: Automotive, Qualification: AEC-Q101.