Продукція > ONSEMI > NVVR26A120M1WSB
NVVR26A120M1WSB

NVVR26A120M1WSB onsemi

nvvr26a120m1wsb-d.pdf
Виробник: onsemi
MOSFET Modules SIC A1HPM 1200 V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис NVVR26A120M1WSB onsemi

Description: MOSFET 2N-CH 1200V AHPM15-CDE, Packaging: Tube, Package / Case: 15-PowerDIP Module (2.441", 62.00mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1000W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 400A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V, Vgs(th) (Max) @ Id: 3.2V @ 150mA, Supplier Device Package: AHPM15-CDE, Grade: Automotive, Qualification: AEC-Q101.

Інші пропозиції NVVR26A120M1WSB

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
NVVR26A120M1WSB NVVR26A120M1WSB onsemi nvvr26a120m1wsb-d.pdf Description: MOSFET 2N-CH 1200V AHPM15-CDE
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1000W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDE
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVVR26A120M1WSB ONSEMI nvvr26a120m1wsb-d.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 400A
Case: AHPM5-CDE
Topology: MOSFET half-bridge
Electrical mounting: screw; THT
On-state resistance: 4.6mΩ
Power dissipation: 1kW
Technology: SiC
Gate-source voltage: -10...25V
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
NVVR26A120M1WSB nvvr26a120m1wsb-d.pdf
NVVR26A120M1WSB
Виробник: onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDE
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1000W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDE
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVVR26A120M1WSB nvvr26a120m1wsb-d.pdf
Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 400A
Case: AHPM5-CDE
Topology: MOSFET half-bridge
Electrical mounting: screw; THT
On-state resistance: 4.6mΩ
Power dissipation: 1kW
Technology: SiC
Gate-source voltage: -10...25V
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.