NVVR26A120M1WSS onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDI
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1000W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDI
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис NVVR26A120M1WSS onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDI, Packaging: Tube, Package / Case: 15-PowerDIP Module (2.441", 62.00mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1000W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 400A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V, Vgs(th) (Max) @ Id: 3.2V @ 150mA, Supplier Device Package: AHPM15-CDI, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVVR26A120M1WSS за ціною від 30140.36 грн до 35086.77 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||
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NVVR26A120M1WSS | Виробник : onsemi |
Discrete Semiconductor Modules SIC A1HPM 1200 V |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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| NVVR26A120M1WSS | Виробник : ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 400A Case: AHPM5-CDI Topology: MOSFET half-bridge Electrical mounting: screw; THT On-state resistance: 4.6mΩ Power dissipation: 1kW Technology: SiC Gate-source voltage: -10...25V Kind of package: tube |
товару немає в наявності |