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Технічний опис NX2301PVL Nexperia
Description: MOSFET P-CHANNEL 20V 2A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 6 V, Qualification: AEC-Q101.
Інші пропозиції NX2301PVL за ціною від 4.06 грн до 24.08 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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NX2301PVL | Nexperia USA Inc. |
 Description: MOSFET P-CHANNEL 20V 2A TO236ABInput Capacitance (Ciss) (Max) @ Vds: 380 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Not For New Designs Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 7425 шт: термін постачання 21-31 дні (днів) |
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NX2301PVL | Nexperia |
MOSFETs NX2301P/SOT23/TO-236AB |
на замовлення 15044 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| NX2301PVL |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CHANNEL 20V 2A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CHANNEL 20V 2A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 7425 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.08 грн |
| 22+ | 13.91 грн |
| 100+ | 8.68 грн |
| 500+ | 6.02 грн |
| 1000+ | 5.34 грн |
| 2000+ | 4.76 грн |
| 5000+ | 4.06 грн |