NX5008NBKMYL Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 50V 350MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 25 V
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Технічний опис NX5008NBKMYL Nexperia USA Inc.
Description: MOSFET N-CH 50V 350MA DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 4.5V, Power Dissipation (Max): 350mW (Ta), 2.8W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-883, Part Status: Active, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 25 V.
Інші пропозиції NX5008NBKMYL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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NX5008NBKMYL | Nexperia USA Inc. |
Description: MOSFET N-CH 50V 350MA DFN1006-3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 4.5V Power Dissipation (Max): 350mW (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NX5008NBKMYL | Nexperia |
MOSFETs SOT883 N-CH 50V .35A |
товару немає в наявності |
В кошику од. на суму грн. |
| NX5008NBKMYL |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 50V 350MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 25 V
Description: MOSFET N-CH 50V 350MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| NX5008NBKMYL |
|
Виробник: Nexperia
MOSFETs SOT883 N-CH 50V .35A
MOSFETs SOT883 N-CH 50V .35A
товару немає в наявності
В кошику
од. на суму грн.