NX5020UNBKR Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: NX5020UNBK/SOT23/TO-236AB
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V
| Кількість | Ціна |
|---|---|
| 25+ | 12.57 грн |
| 44+ | 7.04 грн |
| 61+ | 5.02 грн |
| 100+ | 4.07 грн |
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Технічний опис NX5020UNBKR Nexperia USA Inc.
Description: NX5020UNBK/SOT23/TO-236AB, Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 310mW (Ta), 1.7W (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V, Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції NX5020UNBKR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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NX5020UNBKR | Nexperia USA Inc. |
Description: NX5020UNBK/SOT23/TO-236AB Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 310mW (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| NX5020UNBKR |
|
Виробник: Nexperia USA Inc.
Description: NX5020UNBK/SOT23/TO-236AB
Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: NX5020UNBK/SOT23/TO-236AB
Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.