NX5020UNBKR

NX5020UNBKR Nexperia USA Inc.


NX5020UNBK.pdf Виробник: Nexperia USA Inc.
Description: NX5020UNBK/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V
на замовлення 2355 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.25 грн
44+7.42 грн
61+5.29 грн
100+4.30 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
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Технічний опис NX5020UNBKR Nexperia USA Inc.

Description: NX5020UNBK/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V, Power Dissipation (Max): 310mW (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: TO-236AB, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V.

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NX5020UNBKR NX5020UNBKR Виробник : Nexperia USA Inc. NX5020UNBK.pdf Description: NX5020UNBK/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.