NXH010P90MNF1PG onsemi
| Кількість | Ціна |
|---|---|
| 1+ | 10017.00 грн |
| 10+ | 8589.07 грн |
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Технічний опис NXH010P90MNF1PG onsemi
Description: MOSFET 2N-CH 900V 154A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 328W (Tj), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 154A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V, Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V, Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V, Vgs(th) (Max) @ Id: 4.3V @ 40mA.
Інші пропозиції NXH010P90MNF1PG за ціною від 6070.55 грн до 7476.96 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|
| NXH010P90MNF1PG | onsemi |
 Description: MOSFET 2N-CH 900V 154APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 328W (Tj) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V Vgs(th) (Max) @ Id: 4.3V @ 40mA |
на замовлення 56 шт: термін постачання 21-31 дні (днів) |
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| NXH010P90MNF1PG |
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Виробник: onsemi
Description: MOSFET 2N-CH 900V 154A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 328W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
Description: MOSFET 2N-CH 900V 154A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 328W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
на замовлення 56 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 7476.96 грн |
| 28+ | 6070.55 грн |