NXH040P120MNF1PG onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
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Технічний опис NXH040P120MNF1PG onsemi
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 30A, Case: PIM18, Topology: MOSFET half-bridge, Electrical mounting: Press-in PCB, On-state resistance: 61mΩ, Pulsed drain current: 60A, Power dissipation: 113W, Technology: SiC, Gate-source voltage: -15...25V, Kind of package: in-tray, Mechanical mounting: screw.
Інші пропозиції NXH040P120MNF1PG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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NXH040P120MNF1PG | Виробник : onsemi |
MOSFET Modules PIM F1 SIC HALFBRIDGE 1200V 40MOHM |
товару немає в наявності |
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| NXH040P120MNF1PG | Виробник : ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
товару немає в наявності |