Технічний опис NXH200B100H4F2SG-R onsemi
Description: IGBT MOD 1000V 100A 93W 36-PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: 36-PIM (56.7x48), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Power - Max: 93 W, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 6523 pF @ 20 V.
Інші пропозиції NXH200B100H4F2SG-R за ціною від 10416.11 грн до 11779.96 грн
| Фото | Назва | Виробник | Інформація |
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| NXH200B100H4F2SG-R | Виробник : onsemi |
 Description: IGBT MOD 1000V 100A 93W 36-PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: 36-PIM (56.7x48) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1000 V Power - Max: 93 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 6523 pF @ 20 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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