Технічний опис NXH50M65L4Q1PTG ON Semiconductor
Description: 6KW H6.5 50A Q1PACK PRESS-FIT PI, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: 53-PIM/Q2PACK (93x47), IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 86 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 3.137 nF @ 20 V.
Інші пропозиції NXH50M65L4Q1PTG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NXH50M65L4Q1PTG | Виробник : onsemi |
 Description: 6KW H6.5 50A Q1PACK PRESS-FIT PIPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: 53-PIM/Q2PACK (93x47) IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 86 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 3.137 nF @ 20 V |
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