NXH50M65L4Q1PTG onsemi

Description: IGBT MODULE 650V 48A 86W 53-PIM, Input Capacitance (Cies) @ Vce: 3.137 nF @ 20 V, Current - Collector Cutoff (Max): 300 µA, Power - Max: 86 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 48 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: 53-PIM/Q2PACK (93x47), NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 50A, Operating Temperature: 175°C (TJ), Configuration: Full Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.