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NXH50M65L4Q1PTG onsemi

nxh50m65l4q1sg-d.pdf Виробник: onsemi
Description: 6KW H6.5 50A Q1PACK PRESS-FIT PI
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: 53-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 86 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 3.137 nF @ 20 V
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Технічний опис NXH50M65L4Q1PTG onsemi

Description: 6KW H6.5 50A Q1PACK PRESS-FIT PI, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: 53-PIM/Q2PACK (93x47), IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 86 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 3.137 nF @ 20 V.