Технічний опис NXH80T120L2Q0P2G onsemi
Description: IGBT MOD 1200V 67A 158W 20-PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 80A, NTC Thermistor: Yes, Supplier Device Package: 20-PIM/Q0PACK (55x32.5), IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 67 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 158 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 19.4 nF @ 20 V.
Інші пропозиції NXH80T120L2Q0P2G за ціною від 2975.09 грн до 2975.09 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
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| NXH80T120L2Q0P2G | Виробник : onsemi |
 Description: IGBT MOD 1200V 67A 158W 20-PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 80A NTC Thermistor: Yes Supplier Device Package: 20-PIM/Q0PACK (55x32.5) IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 158 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 19.4 nF @ 20 V |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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