Технічний опис NXH80T120L2Q0SG ON Semiconductor
Description: IGBT MODULE 1200V 65A 146W PIM20, Packaging: Tray, Package / Case: Module, Mounting Type: Through Hole, Input: Standard, Configuration: T-Type, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 80A, NTC Thermistor: Yes, Supplier Device Package: 20-PIM/Q0PACK (55x32.5), Part Status: Active, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 146 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 1.99 nF @ 20 V.
Інші пропозиції NXH80T120L2Q0SG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NXH80T120L2Q0SG | Виробник : ON Semiconductor |
 Trans IGBT Module N-CH 1200V 65A 146000mW 20-Pin Q0PACK Tray |
товар відсутній |
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| NXH80T120L2Q0SG | Виробник : onsemi |
Description: IGBT MODULE 1200V 65A 146W PIM20 Packaging: Tray Package / Case: Module Mounting Type: Through Hole Input: Standard Configuration: T-Type Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 80A NTC Thermistor: Yes Supplier Device Package: 20-PIM/Q0PACK (55x32.5) Part Status: Active Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 146 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 1.99 nF @ 20 V |
товар відсутній |