NXPLQSC20650WQ WeEn Semiconductors
Виробник: WeEn SemiconductorsDescription: DIODE SIL CARB 650V 20A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
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Технічний опис NXPLQSC20650WQ WeEn Semiconductors
Description: DIODE SIL CARB 650V 20A TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A, Current - Reverse Leakage @ Vr: 230 µA @ 650 V.
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| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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NXPLQSC20650WQ | Виробник : WeEn Semiconductors |
Schottky Diodes & Rectifiers NXPLQSC20650WQ/TO-247/STANDARD M |
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