NXPLQSC20650WQ WeEn Semiconductors

Description: DIODE SIL CARB 650V 20A TO247-3, Current - Reverse Leakage @ Vr: 230 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-247-3, Current - Average Rectified (Io) (per Diode): 20A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.