
NXPLQSC30650W6Q WEEN SEMICONDUCTORS

Description: WEEN SEMICONDUCTORS - NXPLQSC30650W6Q - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 650 V, 30 A, 16 nC, TO-247
tariffCode: 85411000
Bauform - Diode: TO-247
Kapazitive Gesamtladung: 16nC
rohsCompliant: YES
Diodenmontage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Zweifach, gemeinsame Kathode
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 30A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 650V
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
на замовлення 199 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
2+ | 549.96 грн |
5+ | 440.46 грн |
10+ | 385.30 грн |
50+ | 350.14 грн |
100+ | 316.85 грн |
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Технічний опис NXPLQSC30650W6Q WEEN SEMICONDUCTORS
Description: DIODE ARRAY SIC 650V 30A TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: 175°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A, Current - Reverse Leakage @ Vr: 250 µA @ 650 V, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 30A.
Інші пропозиції NXPLQSC30650W6Q
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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![]() |
NXPLQSC30650W6Q | Виробник : WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 30A Max. forward impulse current: 50A Kind of package: tube кількість в упаковці: 240 шт |
товару немає в наявності |
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![]() |
NXPLQSC30650W6Q | Виробник : WeEn Semiconductors |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A |
товару немає в наявності |
|
![]() |
NXPLQSC30650W6Q | Виробник : WeEn Semiconductors |
![]() |
товару немає в наявності |
|
![]() |
NXPLQSC30650W6Q | Виробник : WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 30A Max. forward impulse current: 50A Kind of package: tube |
товару немає в наявності |