Технічний опис NXPLQSC30650WQ Ween
Description: DIODE SIL CARB 650V 30A TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: 175°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A, Current - Reverse Leakage @ Vr: 250 µA @ 650 V.
Інші пропозиції NXPLQSC30650WQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NXPLQSC30650WQ | Виробник : WeEn Semiconductors |
 Description: DIODE SIL CARB 650V 30A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
товару немає в наявності |
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NXPLQSC30650WQ | Виробник : WeEn Semiconductors |
Schottky Diodes & Rectifiers NXPLQSC30650WQ/TO-247/STANDARD M |
товару немає в наявності |