NXPSC04650B6J WeEn Semiconductors
Виробник: WeEn SemiconductorsDescription: DIODE SIL CARBIDE 650V 4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 86.88 грн |
| 1600+ | 82.70 грн |
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Технічний опис NXPSC04650B6J WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 170 µA @ 650 V.
Інші пропозиції NXPSC04650B6J за ціною від 105.47 грн до 220.70 грн
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NXPSC04650B6J | Виробник : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 4A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
на замовлення 3090 шт: термін постачання 21-31 дні (днів) |
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NXPSC04650B6J | Виробник : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: D2PAK Max. forward impulse current: 24A Kind of package: reel; tape кількість в упаковці: 800 шт |
товару немає в наявності |
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NXPSC04650B6J | Виробник : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: D2PAK Max. forward impulse current: 24A Kind of package: reel; tape |
товару немає в наявності |