NXPSC10650BJ WeEn Semiconductors

Description: DIODE SIL CARBIDE 650V 10A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 175°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 250 µA @ 650 V.