NXPSC10650X6Q WeEn Semiconductors
Виробник: WeEn SemiconductorsDescription: DIODE SIL CARB 650V 10A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 425.36 грн |
| 10+ | 367.74 грн |
| 100+ | 301.32 грн |
| 500+ | 240.73 грн |
| 1000+ | 203.02 грн |
| 2000+ | 192.87 грн |
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Технічний опис NXPSC10650X6Q WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220F, Packaging: Bulk, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220F, Operating Temperature - Junction: 175°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 250 µA @ 650 V.
Інші пропозиції NXPSC10650X6Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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NXPSC10650X6Q | Виробник : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 50A кількість в упаковці: 1000 шт |
товар відсутній |
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NXPSC10650X6Q | Виробник : WeEn Semiconductors |
Schottky Diodes & Rectifiers NXPSC10650X6/TO-220F/STANDARD MARKING * HORIZONTAL, RAIL PACK |
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NXPSC10650X6Q | Виробник : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 50A |
товар відсутній |