NXV40UNR Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: NXV40UN/SOT23/TO-236AB
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.25 грн |
| 6000+ | 4.56 грн |
| 9000+ | 4.30 грн |
| 15000+ | 3.77 грн |
| 21000+ | 3.61 грн |
| 30000+ | 3.46 грн |
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Технічний опис NXV40UNR Nexperia USA Inc.
Description: NXV40UN/SOT23/TO-236AB, Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 340mW (Ta), 2.1W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V.
Інші пропозиції NXV40UNR за ціною від 3.83 грн до 31.78 грн
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NXV40UNR | Nexperia USA Inc. |
Description: NXV40UN/SOT23/TO-236AB Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 950mV @ 250µA Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power Dissipation (Max): 340mW (Ta), 2.1W (Tc) |
на замовлення 38290 шт: термін постачання 21-31 дні (днів) |
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NXV40UNR | Nexperia |
MOSFET NXV40UN/SOT23/TO-236AB |
на замовлення 13216 шт: термін постачання 21-30 дні (днів) |
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| NXV40UNR |
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Виробник: Nexperia USA Inc.
Description: NXV40UN/SOT23/TO-236AB
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
Description: NXV40UN/SOT23/TO-236AB
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
на замовлення 38290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.08 грн |
| 21+ | 14.72 грн |
| 100+ | 9.19 грн |
| 500+ | 6.39 грн |
| 1000+ | 5.66 грн |