OPA659IDRBT Texas Instruments
Виробник: Texas Instruments
Description: IC OPAMP JFET 1 CIRCUIT 8SON
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 13 V
Voltage - Supply Span (Min): 7 V
-3db Bandwidth: 650 MHz
Current - Output / Channel: 70 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 8-SON (3x3)
Voltage - Input Offset: 1 mV
Current - Input Bias: 10 pA
Gain Bandwidth Product: 350 MHz
Slew Rate: 2550V/µs
Current - Supply: 32mA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: J-FET
Mounting Type: Surface Mount
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Технічний опис OPA659IDRBT Texas Instruments
Description: IC OPAMP JFET 1 CIRCUIT 8SON, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR), Voltage - Supply Span (Max): 13 V, Voltage - Supply Span (Min): 7 V, -3db Bandwidth: 650 MHz, Current - Output / Channel: 70 mA, Number of Circuits: 1, Part Status: Active, Supplier Device Package: 8-SON (3x3), Voltage - Input Offset: 1 mV, Current - Input Bias: 10 pA, Gain Bandwidth Product: 350 MHz, Slew Rate: 2550V/µs, Current - Supply: 32mA, Operating Temperature: -40°C ~ 85°C, Amplifier Type: J-FET, Mounting Type: Surface Mount.
Інші пропозиції OPA659IDRBT за ціною від 428.57 грн до 761.10 грн
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OPA659IDRBT | Texas Instruments |
Description: IC OPAMP JFET 1 CIRCUIT 8SON Voltage - Supply Span (Max): 13 V Voltage - Supply Span (Min): 7 V -3db Bandwidth: 650 MHz Current - Output / Channel: 70 mA Number of Circuits: 1 Part Status: Active Supplier Device Package: 8-SON (3x3) Voltage - Input Offset: 1 mV Current - Input Bias: 10 pA Gain Bandwidth Product: 350 MHz Slew Rate: 2550V/µs Current - Supply: 32mA Operating Temperature: -40°C ~ 85°C Amplifier Type: J-FET Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 310 шт: термін постачання 21-31 дні (днів) |
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OPA659IDRBT | Texas Instruments |
High Speed Operational Amplifiers 650MHz unity gain st able JFET inp Amp A A 595-OPA659IDRBR |
на замовлення 194 шт: термін постачання 21-30 дні (днів) |
|
| OPA659IDRBT |
|
Виробник: Texas Instruments
Description: IC OPAMP JFET 1 CIRCUIT 8SON
Voltage - Supply Span (Max): 13 V
Voltage - Supply Span (Min): 7 V
-3db Bandwidth: 650 MHz
Current - Output / Channel: 70 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 8-SON (3x3)
Voltage - Input Offset: 1 mV
Current - Input Bias: 10 pA
Gain Bandwidth Product: 350 MHz
Slew Rate: 2550V/µs
Current - Supply: 32mA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: J-FET
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC OPAMP JFET 1 CIRCUIT 8SON
Voltage - Supply Span (Max): 13 V
Voltage - Supply Span (Min): 7 V
-3db Bandwidth: 650 MHz
Current - Output / Channel: 70 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 8-SON (3x3)
Voltage - Input Offset: 1 mV
Current - Input Bias: 10 pA
Gain Bandwidth Product: 350 MHz
Slew Rate: 2550V/µs
Current - Supply: 32mA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: J-FET
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 310 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 710.62 грн |
| 10+ | 534.95 грн |
| 25+ | 497.66 грн |
| 100+ | 428.57 грн |
| OPA659IDRBT |
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Виробник: Texas Instruments
High Speed Operational Amplifiers 650MHz unity gain st able JFET inp Amp A A 595-OPA659IDRBR
High Speed Operational Amplifiers 650MHz unity gain st able JFET inp Amp A A 595-OPA659IDRBR
на замовлення 194 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 761.10 грн |
| 10+ | 587.48 грн |
| 25+ | 474.95 грн |
| 100+ | 439.06 грн |