P6SMB12CA-E3/5B Vishay General Semiconductor
на замовлення 2180 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 27.98 грн |
| 15+ | 22.76 грн |
| 100+ | 17.07 грн |
| 3200+ | 6.77 грн |
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Технічний опис P6SMB12CA-E3/5B Vishay General Semiconductor
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; TransZorb®, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 10.2V, Breakdown voltage: 12V, Max. forward impulse current: 35.9A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: SMB, Mounting: SMD, Leakage current: 5µA, Kind of package: 13 inch reel; tape, Features of semiconductor devices: glass passivated, Manufacturer series: P6SMB, Technology: TransZorb®, кількість в упаковці: 3200 шт.
Інші пропозиції P6SMB12CA-E3/5B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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P6SMB12CA-E3/5B | Виробник : Vishay |
 Diode TVS Single Bi-Dir 10.2V 600W 2-Pin SMB T/R |
товару немає в наявності |
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P6SMB12CA-E3/5B | Виробник : VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 35.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: 13 inch reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® кількість в упаковці: 3200 шт |
товару немає в наявності |
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P6SMB12CA-E3/5B | Виробник : Vishay |
TVS Diode Single Bi-Dir 10.2V 600W 2-Pin SMB T/R |
товару немає в наявності |
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P6SMB12CA-E3/5B | Виробник : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 10.2VWM 16.7V DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 35.9A Voltage - Reverse Standoff (Typ): 10.2V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
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P6SMB12CA-E3/5B | Виробник : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 10.2VWM 16.7V DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 35.9A Voltage - Reverse Standoff (Typ): 10.2V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
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P6SMB12CA-E3/5B | Виробник : VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 35.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: 13 inch reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® |
товару немає в наявності |