Відгуки про товар
Написати відгук
Технічний опис P6SMB18A-AU-R1-006A1 Panjit
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 15.3V, Breakdown voltage: 17.1...18.9V, Max. forward impulse current: 24A, Semiconductor structure: unidirectional, Case: SMB, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, Application: automotive industry, Manufacturer series: P6SMB, Features of semiconductor devices: glass passivated.
Інші пропозиції P6SMB18A-AU-R1-006A1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| P6SMB18A-AU_R1_006A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1...18.9V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. |
| P6SMB18A-AU_R1_006A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.

