Технічний опис P6SMB200A R4 Taiwan Semiconductor
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 171V, Breakdown voltage: 200V, Max. forward impulse current: 2.2A, Semiconductor structure: unidirectional, Tolerance: ±5%, Case: SMB, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, Manufacturer series: P6SMB.
Інші пропозиції P6SMB200A R4
| Фото | Назва | Виробник | Інформація |
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Ціна |
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P6SMB200A R4 | Виробник : Taiwan Semiconductor |
 TVS Diode Single Uni-Dir 171V 600W 2-Pin SMB T/R |
товару немає в наявності |
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P6SMB200A R4 | Виробник : Taiwan Semiconductor | ESD Protection Diodes / TVS Diodes 600W, 200V, 5%, Unidirectional, TVS |
товару немає в наявності |
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P6SMB200A R4 | Виробник : TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
товару немає в наявності |