Технічний опис P6SMB56A-AU_R2_000A1 Panjit
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape, Type of diode: TVS, Mounting: SMD, Kind of package: reel; tape, Case: SMB, Semiconductor structure: unidirectional, Features of semiconductor devices: glass passivated, Manufacturer series: P6SMB, Application: automotive industry, Leakage current: 1µA, Max. forward impulse current: 7.8A, Max. off-state voltage: 47.8V, Breakdown voltage: 53.2...58.8V, Peak pulse power dissipation: 0.6kW.
Інші пропозиції P6SMB56A-AU_R2_000A1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| P6SMB56A-AU_R2_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Application: automotive industry Leakage current: 1µA Max. forward impulse current: 7.8A Max. off-state voltage: 47.8V Breakdown voltage: 53.2...58.8V Peak pulse power dissipation: 0.6kW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| P6SMB56A-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Application: automotive industry
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Application: automotive industry
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.