Технічний опис P6SMB56CA-E3/5B Vishay
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 600W; 56V; 7.8A; bidirectional; ±5%; SMB; TransZorb®, Type of diode: TVS, Mounting: SMD, Tolerance: ±5%, Kind of package: 13 inch reel; tape, Case: SMB, Semiconductor structure: bidirectional, Manufacturer series: P6SMB, Technology: TransZorb®, Leakage current: 1µA, Max. forward impulse current: 7.8A, Max. off-state voltage: 47.8V, Breakdown voltage: 56V, Peak pulse power dissipation: 0.6kW, Features of semiconductor devices: glass passivated.
Інші пропозиції P6SMB56CA-E3/5B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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P6SMB56CA-E3/5B | Виробник : Vishay |
 TVS Diode Single Bi-Dir 47.8V 600W 2-Pin SMB T/R |
товару немає в наявності |
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P6SMB56CA-E3/5B | Виробник : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 47.8VWM 77VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7.8A Voltage - Reverse Standoff (Typ): 47.8V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 53.2V Voltage - Clamping (Max) @ Ipp: 77V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
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P6SMB56CA-E3/5B | Виробник : Vishay General Semiconductor |
ESD Protection Diodes / TVS Diodes 600W 56V Bidirect |
товару немає в наявності |
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P6SMB56CA-E3\5B | Виробник : Vishay Semiconductors | ESD Protection Diodes / TVS Diodes 600W,56V 5%,BIDIR,SMB TVS |
товару немає в наявності |
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P6SMB56CA-E3/5B | Виробник : VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 56V; 7.8A; bidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: 13 inch reel; tape Case: SMB Semiconductor structure: bidirectional Manufacturer series: P6SMB Technology: TransZorb® Leakage current: 1µA Max. forward impulse current: 7.8A Max. off-state voltage: 47.8V Breakdown voltage: 56V Peak pulse power dissipation: 0.6kW Features of semiconductor devices: glass passivated |
товару немає в наявності |