Технічний опис P6SMBJ45CA_R1_00001 Panjit International Inc.
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 0.6kW; 50÷55.3V; 8.3A; bidirectional; SMB; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 45V, Breakdown voltage: 50...55.3V, Max. forward impulse current: 8.3A, Semiconductor structure: bidirectional, Case: SMB, Mounting: SMD, Leakage current: 1µA, Features of semiconductor devices: glass passivated, Kind of package: reel; tape, Manufacturer series: P6SMBJ.
Інші пропозиції P6SMBJ45CA_R1_00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
P6SMBJ45CA_R1_00001 | Panjit International Inc. |
 Description: TVS DIODE 45VWM 72.7VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. |
 |
P6SMBJ45CA_R1_00001 | Panjit |
ESD Suppressors / TVS Diodes 600W Transient Voltage Suppressors 45V BI |
товару немає в наявності |
В кошику од. на суму грн. |
 |
P6SMBJ45CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 50÷55.3V; 8.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| P6SMBJ45CA_R1_00001 |
|
Виробник: Panjit International Inc.
Description: TVS DIODE 45VWM 72.7VC DO214AA
Description: TVS DIODE 45VWM 72.7VC DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| P6SMBJ45CA_R1_00001 |
|
Виробник: Panjit
ESD Suppressors / TVS Diodes 600W Transient Voltage Suppressors 45V BI
ESD Suppressors / TVS Diodes 600W Transient Voltage Suppressors 45V BI
товару немає в наявності
В кошику
од. на суму грн.
| P6SMBJ45CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷55.3V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷55.3V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.