P8B10SB-5071 SHINDENGEN
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Case: FB (TO252AA)
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 16.5nC
On-state resistance: 94mΩ
Power dissipation: 20W
Drain current: 8A
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain-source voltage: 100V
Polarisation: unipolar
| Кількість | Ціна |
|---|---|
| 20+ | 23.76 грн |
| 25+ | 19.85 грн |
| 100+ | 17.48 грн |
| 500+ | 15.78 грн |
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Технічний опис P8B10SB-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W, Case: FB (TO252AA), Kind of package: reel; tape, Technology: EETMOS3, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Gate charge: 16.5nC, On-state resistance: 94mΩ, Power dissipation: 20W, Drain current: 8A, Gate-source voltage: ±20V, Pulsed drain current: 24A, Drain-source voltage: 100V, Polarisation: unipolar.