PBHV9110DW_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: PNP LOW VCE(SAT) TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.42 грн |
| 16+ | 19.77 грн |
| 100+ | 12.49 грн |
| 500+ | 8.76 грн |
| 1000+ | 7.80 грн |
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Технічний опис PBHV9110DW_R2_00001 Panjit International Inc.
Description: PNP LOW VCE(SAT) TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-223, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 2.6 W.
Інші пропозиції PBHV9110DW_R2_00001
| Фото | Назва | Виробник | Інформація |
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Ціна |
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PBHV9110DW_R2_00001 | Виробник : Panjit International Inc. |
Description: PNP LOW VCE(SAT) TRANSISTOR Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2.6 W |
товару немає в наявності |
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 |
PBHV9110DW_R2_00001 | Виробник : Panjit |
Bipolar Transistors - BJT PNP Low Vce(sat) Transistor |
товару немає в наявності |
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PBHV9110DW-R2-00001 | Виробник : Panjit |
Bipolar Transistors - BJT SOT-223/TRA/SOT/GPT-26TWP |
товару немає в наявності |