Технічний опис PBLS2002S,115 NXP
Description: TRANS PREBIAS 1NPN 1PNP 8-SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 1.5W, Current - Collector (Ic) (Max): 100mA, 3A, Voltage - Collector Emitter Breakdown (Max): 50V, 20V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A, Current - Collector Cutoff (Max): 1µA, 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V, Frequency - Transition: 100MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: 8-SO.
Інші пропозиції PBLS2002S,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
PBLS2002S,115 | NXP USA Inc. |
 Description: TRANS PREBIAS 1NPN 1PNP 8-SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 1.5W Current - Collector (Ic) (Max): 100mA, 3A Voltage - Collector Emitter Breakdown (Max): 50V, 20V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A Current - Collector Cutoff (Max): 1µA, 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V Frequency - Transition: 100MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: 8-SO |
товару немає в наявності |
В кошику од. на суму грн. |
| PBLS2002S,115 |
|
Виробник: NXP USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 1.5W
Current - Collector (Ic) (Max): 100mA, 3A
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
Current - Collector Cutoff (Max): 1µA, 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V
Frequency - Transition: 100MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: 8-SO
Description: TRANS PREBIAS 1NPN 1PNP 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 1.5W
Current - Collector (Ic) (Max): 100mA, 3A
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
Current - Collector Cutoff (Max): 1µA, 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V
Frequency - Transition: 100MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: 8-SO
товару немає в наявності
В кошику
од. на суму грн.