PBR941B,215 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 9GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 360mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Supplier Device Package: SOT-23 (TO-236AB)
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Технічний опис PBR941B,215 NXP USA Inc.
Description: RF TRANS NPN 10V 9GHZ TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 360mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz, Supplier Device Package: SOT-23 (TO-236AB).
Інші пропозиції PBR941B,215
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
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PBR941B,215 | NXP USA Inc. |
Description: RF TRANS NPN 10V 9GHZ TO236AB Supplier Device Package: SOT-23 (TO-236AB) Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz Frequency - Transition: 9GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Voltage - Collector Emitter Breakdown (Max): 10V Current - Collector (Ic) (Max): 50mA Power - Max: 360mW Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PBR941B,215 | NXP Semiconductors |
RF Bipolar Transistors Single NPN 10V 50mA 360mW 100 9GHz |
товару немає в наявності |
В кошику од. на суму грн. |
| PBR941B,215 |
|
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 9GHZ TO236AB
Supplier Device Package: SOT-23 (TO-236AB)
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 50mA
Power - Max: 360mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 10V 9GHZ TO236AB
Supplier Device Package: SOT-23 (TO-236AB)
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 50mA
Power - Max: 360mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PBR941B,215 |
|
Виробник: NXP Semiconductors
RF Bipolar Transistors Single NPN 10V 50mA 360mW 100 9GHz
RF Bipolar Transistors Single NPN 10V 50mA 360mW 100 9GHz
товару немає в наявності
В кошику
од. на суму грн.