PBSS4041SPN,115

Виробник: Nexperia USA Inc.
Description: TRANS NPN/PNP 60V 6.7A/5.9A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 6.7A, 5.9A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 350mA, 7A / 275mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V / 150 @ 2A, 2V
Frequency - Transition: 130MHz, 110MHz
Supplier Device Package: 8-SO
Part Status: Obsolete

Виробник: Nexperia
Bipolar Transistors - BJT Dual +/-60V +6.7A -5.9A 0.73W 130MHz

Виробник: NEXPERIA
Description: NEXPERIA - PBSS4041SPN,115 - Bipolares Transistor-Array, NPN, PNP, 60 V, 6.7 A, 2.3 W, 300 hFE, SOIC
Transistormontage: Oberflächenmontage
DC-Stromverstärkung hFE: 300
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2.3
Bauform - Transistor: SOIC
Kollektor-Emitter-Spannung V(br)ceo: 60
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: NPN, PNP
DC-Kollektorstrom: 6.7
Betriebstemperatur, max.: 150
SVHC: No SVHC (27-Jun-2018)

Виробник: NEXPERIA
Description: NEXPERIA - PBSS4041SPN,115 - Bipolares Transistor-Array, NPN, PNP, 60 V, 6.7 A, 2.3 W, 300 hFE, SOIC
SVHC: No SVHC (27-Jun-2018)

Виробник: Nexperia
Trans GP BJT NPN/PNP 60V 6.7A/5.9A 2300mW 8-Pin SO T/R

Виробник: Nexperia
Trans GP BJT NPN/PNP 60V 6.7A/5.9A 2300mW 8-Pin SO T/R