PBSS4112PAN,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: TRANS 2NPN 120V 1A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 608 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 54.39 грн |
| 10+ | 32.93 грн |
| 100+ | 21.27 грн |
| 500+ | 15.23 грн |
Відгуки про товар
Написати відгук
Технічний опис PBSS4112PAN,115 Nexperia USA Inc.
Description: TRANS 2NPN 120V 1A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 510mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 2V, Frequency - Transition: 120MHz, Supplier Device Package: 6-HUSON (2x2), Part Status: Active, Grade: Automotive, Qualification: AEC-Q100.
Інші пропозиції PBSS4112PAN,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
PBSS4112PAN,115 | Виробник : NEXPERIA |
Trans GP BJT NPN 120V 1A 1450mW Automotive 6-Pin HUSON EP T/R |
товару немає в наявності |
|
|
PBSS4112PAN,115 | Виробник : Nexperia USA Inc. |
Description: TRANS 2NPN 120V 1A 6HUSONPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 510mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: 6-HUSON (2x2) Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
|
|
PBSS4112PAN,115 | Виробник : Nexperia |
Bipolar Transistors - BJT 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor |
товару немає в наявності |
