PBSS4112PANP-QX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: PBSS4112PANP-Q/SOT1118/HUSON6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A / 480mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 100mA, 2V / 190 @ 100mA, 2V
Frequency - Transition: 120MHz, 100MHz
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис PBSS4112PANP-QX Nexperia USA Inc.
Description: PBSS4112PANP-Q/SOT1118/HUSON6, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: 150°C (TJ), Power - Max: 510mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A / 480mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 100mA, 2V / 190 @ 100mA, 2V, Frequency - Transition: 120MHz, 100MHz, Supplier Device Package: 6-HUSON (2x2), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PBSS4112PANP-QX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PBSS4112PANP-QX | Виробник : Nexperia |
120 V, 1 A NPN/PNP low VCEsat transistor |
товару немає в наявності |