PBSS4130QAZ NXP Semiconductors
Виробник: NXP SemiconductorsDescription: NEXPERIA PBSS4130QA - 30 V, 1 A
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
на замовлення 243300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4163+ | 4.67 грн |
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Технічний опис PBSS4130QAZ NXP Semiconductors
Description: TRANS NPN 30V 1A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V, Frequency - Transition: 190MHz, Supplier Device Package: DFN1010D-3, Grade: Automotive, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 325 mW, Qualification: AEC-Q100.
Інші пропозиції PBSS4130QAZ за ціною від 4.67 грн до 4.67 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
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PBSS4130QAZ | Виробник : Nexperia USA Inc. |
Description: TRANS NPN 30V 1A DFN1010D-3 Packaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 190MHz Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 325 mW Qualification: AEC-Q100 |
на замовлення 12002 шт: термін постачання 21-31 дні (днів) |
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PBSS4130QAZ | Виробник : Nexperia |
Trans GP BJT NPN 30V 1A 325mW Automotive AEC-Q101 3-Pin DFN-D EP T/R |
товар відсутній |
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PBSS4130QAZ | Виробник : Nexperia USA Inc. |
Description: TRANS NPN 30V 1A DFN1010D-3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 190MHz Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 325 mW Qualification: AEC-Q100 |
товар відсутній |
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PBSS4130QAZ | Виробник : Nexperia USA Inc. |
Description: TRANS NPN 30V 1A DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 190MHz Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 325 mW Qualification: AEC-Q100 |
товар відсутній |
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PBSS4130QAZ | Виробник : Nexperia |
Bipolar Transistors - BJT PBSS4130QA/SOT1215/DFN1010D-3 |
товар відсутній |