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PBSS4160PANPS115

PBSS4160PANPS115 NXP USA Inc.

PBSS4160PANPS.pdf
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DFN2020D-6
Frequency - Transition: 175MHz, 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 370mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN, PNP
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Bulk
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2112+10.10 грн
Мінімальне замовлення: 2112
В кошику  од. на суму  грн.
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Технічний опис PBSS4160PANPS115 NXP USA Inc.

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: DFN2020D-6, Frequency - Transition: 175MHz, 125MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Current - Collector (Ic) (Max): 1A, Power - Max: 370mW, Operating Temperature: 150°C (TJ), Transistor Type: NPN, PNP, Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Bulk.