Технічний опис PBSS4240T-QR Nexperia
Description: PBSS4240T-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 100mA, 2V, Frequency - Transition: 230MHz, Supplier Device Package: TO-236AB, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 300 mW, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PBSS4240T-QR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| PBSS4240T-QR | Виробник : NEXPERIA |
 Trans GP BJT NPN 40V 2A 480mW 3-Pin SOT-23 |
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PBSS4240T-QR | Виробник : Nexperia USA Inc. |
Description: PBSS4240T-Q/SOT23/TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 100mA, 2V Frequency - Transition: 230MHz Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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PBSS4240T-QR | Виробник : Nexperia |
Bipolar Transistors - BJT PBSS4240T-Q/SOT23/TO-236AB |
товар відсутній |