PBSS4350X-QF Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: BIPOLAR DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 550 mW
Qualification: AEC-Q101
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Технічний опис PBSS4350X-QF Nexperia USA Inc.
Description: BIPOLAR DISCRETES, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-89, Grade: Automotive, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 550 mW, Qualification: AEC-Q101.
Інші пропозиції PBSS4350X-QF
| Фото | Назва | Виробник | Інформація |
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PBSS4350X-QF | Виробник : Nexperia USA Inc. |
Description: BIPOLAR DISCRETES Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 550 mW Qualification: AEC-Q101 |
товару немає в наявності |
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PBSS4350X-QF | Виробник : Nexperia |
Bipolar Transistors - BJT PBSS4350X-Q/SOT89/MPT3 |
товару немає в наявності |