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PBSS5130QAZ

PBSS5130QAZ Nexperia

PBSS5130QA-1599519.pdf
Виробник: Nexperia
Bipolar Transistors - BJT 30 V, 1A PNP low VCE sat (BISS) transi
на замовлення 9900 шт:
термін постачання 21-30 дні (днів)
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Технічний опис PBSS5130QAZ Nexperia

Description: TRANS PNP 30V 1A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1A, 2V, Frequency - Transition: 170MHz, Supplier Device Package: DFN1010D-3, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 325 mW.

Інші пропозиції PBSS5130QAZ

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
PBSS5130QAZ PBSS5130QAZ Nexperia USA Inc. PBSS5130QA.pdf Description: TRANS PNP 30V 1A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1A, 2V
Frequency - Transition: 170MHz
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
товару немає в наявності
В кошику  од. на суму  грн.
PBSS5130QAZ PBSS5130QAZ Nexperia USA Inc. PBSS5130QA.pdf Description: TRANS PNP 30V 1A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1A, 2V
Frequency - Transition: 170MHz
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
товару немає в наявності
В кошику  од. на суму  грн.
PBSS5130QAZ PBSS5130QA.pdf
PBSS5130QAZ
Виробник: Nexperia USA Inc.
Description: TRANS PNP 30V 1A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1A, 2V
Frequency - Transition: 170MHz
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
товару немає в наявності
В кошику  од. на суму  грн.
PBSS5130QAZ PBSS5130QA.pdf
PBSS5130QAZ
Виробник: Nexperia USA Inc.
Description: TRANS PNP 30V 1A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1A, 2V
Frequency - Transition: 170MHz
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
товару немає в наявності
В кошику  од. на суму  грн.