PBSS5130QAZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: TRANS PNP 30V 1A DFN1010D-3
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1A, 2V
Frequency - Transition: 170MHz
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
на замовлення 63599 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5124+ | 3.98 грн |
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Технічний опис PBSS5130QAZ Nexperia USA Inc.
Description: TRANS PNP 30V 1A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1A, 2V, Frequency - Transition: 170MHz, Supplier Device Package: DFN1010D-3, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 325 mW.
Інші пропозиції PBSS5130QAZ за ціною від 3.98 грн до 3.98 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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PBSS5130QAZ | Виробник : NXP Semiconductors |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Frequency - Transition: 170MHz Supplier Device Package: DFN1010D-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 325 mW |
на замовлення 204190 шт: термін постачання 21-31 дні (днів) |
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PBSS5130QAZ | Виробник : Nexperia |
Bipolar Transistors - BJT 30 V, 1A PNP low VCE sat (BISS) transi |
на замовлення 9900 шт: термін постачання 21-30 дні (днів) |
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PBSS5130QAZ | Виробник : Nexperia USA Inc. |
Description: TRANS PNP 30V 1A DFN1010D-3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1A, 2V Frequency - Transition: 170MHz Supplier Device Package: DFN1010D-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 325 mW |
товар відсутній |
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PBSS5130QAZ | Виробник : Nexperia USA Inc. |
Description: TRANS PNP 30V 1A DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1A, 2V Frequency - Transition: 170MHz Supplier Device Package: DFN1010D-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 325 mW |
товар відсутній |