PBSS5230QAZ NXP Semiconductors
Виробник: NXP Semiconductors
Description: TRANS PNP 30V 2A DFN1010D-3
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Frequency - Transition: 170MHz
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
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Технічний опис PBSS5230QAZ NXP Semiconductors
Description: TRANS PNP 30V 2A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 210mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V, Frequency - Transition: 170MHz, Supplier Device Package: DFN1010D-3, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 325 mW.
Інші пропозиції PBSS5230QAZ за ціною від 12.52 грн до 33.70 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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PBSS5230QAZ | Nexperia USA Inc. |
Description: TRANS PNP 30V 2A DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Frequency - Transition: 170MHz Supplier Device Package: DFN1010D-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 325 mW |
на замовлення 144 шт: термін постачання 21-31 дні (днів) |
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PBSS5230QAZ | Nexperia |
Bipolar Transistors - BJT 30 V, 2A PNP low VCE sat (BISS) transi |
на замовлення 4740 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PBSS5230QAZ |
|
Виробник: Nexperia USA Inc.
Description: TRANS PNP 30V 2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Frequency - Transition: 170MHz
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
Description: TRANS PNP 30V 2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Frequency - Transition: 170MHz
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.70 грн |
| 16+ | 19.78 грн |
| 100+ | 12.52 грн |
| PBSS5230QAZ |
|
Виробник: Nexperia
Bipolar Transistors - BJT 30 V, 2A PNP low VCE sat (BISS) transi
Bipolar Transistors - BJT 30 V, 2A PNP low VCE sat (BISS) transi
на замовлення 4740 шт:
термін постачання 21-30 дні (днів)