PBSS5250TH-QR Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: TRANS PNP 50V 2A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Qualification: AEC-Q101
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Технічний опис PBSS5250TH-QR Nexperia USA Inc.
Description: TRANS PNP 50V 2A TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236AB, Grade: Automotive, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 360 mW, Qualification: AEC-Q101.
Інші пропозиції PBSS5250TH-QR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PBSS5250TH-QR | Виробник : Nexperia |
Bipolar Transistors - BJT PBSS5250TH-Q/SOT23/TO-236AB |
товару немає в наявності |