PBSS5350T,215

Виробник: Nexperia
Trans GP BJT PNP 50V 2A 1200mW 3-Pin SOT-23 T/R

Виробник: Nexperia
TRANS PNP 50V 2A SOT-23 Транзистори

Виробник: NXP/Nexperia/We-En
Транзистор PNP, Uceo, В = 50, Ic = 2 А, ft, МГц = 100, hFE = 200 @ 1 A, 2 В, Icutoff-max = 100 нА, Uceo(sat), В @ Ic, Ib = 0,39 @ 300 мA, 3 A, Р, Вт = 0,54 Вт, Тексп, °C = -65...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт
кількість в упаковці: 3000 шт

Виробник: Nexperia USA Inc.
Description: TRANS PNP 50V 2A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 540 mW

Виробник: Nexperia USA Inc.
Description: TRANS PNP 50V 2A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 540 mW

Виробник: Nexperia
Bipolar Transistors - BJT PBSS5350T/SOT23/TO-236AB

Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Pulsed collector current: 5A
Current gain: 80...200