PCDB10120G1_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 1200V SIC SCHOTTKY BARRIER DIODE
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 529pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Технічний опис PCDB10120G1_R2_00001 Panjit International Inc.
Description: 1200V SIC SCHOTTKY BARRIER DIODE, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-263, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 529pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції PCDB10120G1_R2_00001 за ціною від 291.59 грн до 558.86 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
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PCDB10120G1_R2_00001 | Panjit International Inc. |
Description: 1200V SIC SCHOTTKY BARRIER DIODE Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 529pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 2350 шт: термін постачання 21-31 дні (днів) |
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PCDB10120G1_R2_00001 | Panjit |
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode |
на замовлення 2270 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PCDB10120G1_R2_00001 |
|
Виробник: Panjit International Inc.
Description: 1200V SIC SCHOTTKY BARRIER DIODE
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 529pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: 1200V SIC SCHOTTKY BARRIER DIODE
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 529pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 558.86 грн |
| 10+ | 383.05 грн |
| 100+ | 291.59 грн |
| PCDB10120G1_R2_00001 |
|
Виробник: Panjit
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode
на замовлення 2270 шт:
термін постачання 21-30 дні (днів)