PCDB1065G1_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: DIODE SIL CARBIDE 650V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 364pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 168.28 грн |
| 1600+ | 138.75 грн |
| 2400+ | 130.65 грн |
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Технічний опис PCDB1065G1_R2_00001 Panjit International Inc.
Description: DIODE SIL CARBIDE 650V 10A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 364pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 70 µA @ 650 V.
Інші пропозиції PCDB1065G1_R2_00001 за ціною від 182.3 грн до 278.76 грн
| Фото | Назва | Виробник | Інформація |
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PCDB1065G1_R2_00001 | Виробник : Panjit International Inc. |
Description: DIODE SIL CARBIDE 650V 10A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 364pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 70 µA @ 650 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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| PCDB1065G1_R2_00001 | Виробник : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: TO263 Max. off-state voltage: 650V Max. load current: 40A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 50µA кількість в упаковці: 1 шт |
товар відсутній |
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PCDB1065G1_R2_00001 | Виробник : Panjit |
Schottky Diodes & Rectifiers 650V SiC Schottky Barrier Diode |
товар відсутній |
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PCDB1065G1-R2-00001 | Виробник : Panjit |
Schottky Diodes & Rectifiers TO-263/SKY/TO/SIC-100DWH |
товар відсутній |
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| PCDB1065G1_R2_00001 | Виробник : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: TO263 Max. off-state voltage: 650V Max. load current: 40A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 50µA |
товар відсутній |