PCDD1065G1_L2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: DIODE SIL CARB 650V 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 364pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
на замовлення 2187 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 366.51 грн |
| 10+ | 235.05 грн |
| 100+ | 167.98 грн |
| 500+ | 130.80 грн |
| 1000+ | 123.43 грн |
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Технічний опис PCDD1065G1_L2_00001 Panjit International Inc.
Description: DIODE SIL CARB 650V 10A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 364pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-252AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 70 µA @ 650 V.
Інші пропозиції PCDD1065G1_L2_00001 за ціною від 131.89 грн до 399.71 грн
| Фото | Назва | Виробник | Інформація |
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PCDD1065G1_L2_00001 | Виробник : Panjit |
SiC Schottky Diodes 650V SiC Schottky Barrier Diode |
на замовлення 2983 шт: термін постачання 21-30 дні (днів) |
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PCDD1065G1_L2_00001 | Виробник : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252AA; SiC; SMD; 650V; 10A; reel,tape Case: TO252AA Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 70µA Max. forward voltage: 1.8V Load current: 10A Max. load current: 44A Power dissipation: 99.3W Max. forward impulse current: 0.55kA Max. off-state voltage: 650V кількість в упаковці: 1 шт |
товару немає в наявності |
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PCDD1065G1_L2_00001 | Виробник : Panjit International Inc. |
Description: DIODE SIL CARB 650V 10A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 364pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 70 µA @ 650 V |
товару немає в наявності |
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PCDD1065G1-L2-00001 | Виробник : Panjit |
Schottky Diodes & Rectifiers TO-252AA/SIC/TO/SIC-100SWH |
товару немає в наявності |
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PCDD1065G1_L2_00001 | Виробник : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252AA; SiC; SMD; 650V; 10A; reel,tape Case: TO252AA Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 70µA Max. forward voltage: 1.8V Load current: 10A Max. load current: 44A Power dissipation: 99.3W Max. forward impulse current: 0.55kA Max. off-state voltage: 650V |
товару немає в наявності |