Технічний опис PCDE1065G1-R2-00001 Panjit
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape, Case: TO263, Mounting: SMD, Kind of package: reel; tape, Type of diode: Schottky rectifying, Technology: SiC, Semiconductor structure: single diode, Leakage current: 70µA, Max. forward voltage: 1.8V, Load current: 10A, Max. load current: 44A, Power dissipation: 102.7W, Max. forward impulse current: 0.55kA, Max. off-state voltage: 650V.
Інші пропозиції PCDE1065G1-R2-00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PCDE1065G1_R2_00001 | Виробник : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape Case: TO263 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 70µA Max. forward voltage: 1.8V Load current: 10A Max. load current: 44A Power dissipation: 102.7W Max. forward impulse current: 0.55kA Max. off-state voltage: 650V |
товару немає в наявності |