PCDE1065G1_R2_00001 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward voltage: 1.8V
Load current: 10A
Max. load current: 44A
Power dissipation: 102.7W
Max. forward impulse current: 0.55kA
Max. off-state voltage: 650V
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward voltage: 1.8V
Load current: 10A
Max. load current: 44A
Power dissipation: 102.7W
Max. forward impulse current: 0.55kA
Max. off-state voltage: 650V
кількість в упаковці: 800 шт
товару немає в наявності
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Технічний опис PCDE1065G1_R2_00001 PanJit Semiconductor
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape, Case: TO263, Mounting: SMD, Kind of package: reel; tape, Type of diode: Schottky rectifying, Technology: SiC, Semiconductor structure: single diode, Leakage current: 70µA, Max. forward voltage: 1.8V, Load current: 10A, Max. load current: 44A, Power dissipation: 102.7W, Max. forward impulse current: 0.55kA, Max. off-state voltage: 650V, кількість в упаковці: 800 шт.
Інші пропозиції PCDE1065G1_R2_00001
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PCDE1065G1-R2-00001 | Виробник : Panjit | Schottky Diodes & Rectifiers TO-263/SIC/TO/SIC-100DWH |
товару немає в наявності |
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PCDE1065G1_R2_00001 | Виробник : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape Case: TO263 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 70µA Max. forward voltage: 1.8V Load current: 10A Max. load current: 44A Power dissipation: 102.7W Max. forward impulse current: 0.55kA Max. off-state voltage: 650V |
товару немає в наявності |