PCDF0865G1_T0_00601 Panjit International Inc.
Виробник: Panjit International Inc.Description: DIODE SIL CARB 650V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 441.67 грн |
| 50+ | 224.98 грн |
| 100+ | 205.60 грн |
| 500+ | 161.09 грн |
| 1000+ | 155.89 грн |
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Технічний опис PCDF0865G1_T0_00601 Panjit International Inc.
Description: DIODE SIL CARB 650V 8A ITO220AC, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Інші пропозиції PCDF0865G1_T0_00601
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PCDF0865G1_T0_00601 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. load current: 28A Max. forward voltage: 1.8V Max. forward impulse current: 0.48kA Leakage current: 60µA Power dissipation: 78.1W кількість в упаковці: 1 шт |
товару немає в наявності |
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PCDF0865G1_T0_00601 | Виробник : Panjit |
SiC Schottky Diodes 650V/8A Through Hole Silicon Carbide Schottky Barrier Diode |
товару немає в наявності |
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| PCDF0865G1_T0_00601 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. load current: 28A Max. forward voltage: 1.8V Max. forward impulse current: 0.48kA Leakage current: 60µA Power dissipation: 78.1W |
товару немає в наявності |