PCDF1065G1_T0_00601 Panjit International Inc.
Виробник: Panjit International Inc.Description: 650V/10A THROUGH HOLE SILICON CA
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 401.53 грн |
| 50+ | 306.25 грн |
| 100+ | 262.5 грн |
| 500+ | 218.97 грн |
| 1000+ | 187.5 грн |
| 2000+ | 176.55 грн |
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Технічний опис PCDF1065G1_T0_00601 Panjit International Inc.
Description: 650V/10A THROUGH HOLE SILICON CA, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 380pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 70 µA @ 650 V.
Інші пропозиції PCDF1065G1_T0_00601
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| PCDF1065G1_T0_00601 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 104.2W; ITO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Max. load current: 36A Power dissipation: 104.2W Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. forward impulse current: 560A Max. forward voltage: 1.8V Leakage current: 70µA кількість в упаковці: 1 шт |
товар відсутній |
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PCDF1065G1_T0_00601 | Виробник : Panjit |
Schottky Diodes & Rectifiers 650V/10A Through Hole Silicon Carbide Schottky Barrier Diode |
товар відсутній |
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| PCDF1065G1_T0_00601 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 104.2W; ITO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Max. load current: 36A Power dissipation: 104.2W Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. forward impulse current: 560A Max. forward voltage: 1.8V Leakage current: 70µA |
товар відсутній |