| Кількість | Ціна |
|---|---|
| 1+ | 899.27 грн |
| 10+ | 581.84 грн |
| 120+ | 505.25 грн |
| 1020+ | 504.55 грн |
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Технічний опис PCDH20120CCG1_T0_00601 Panjit
Description: DIODE ARR SIC 1200V 10A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A (DC), Supplier Device Package: TO-247AD, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції PCDH20120CCG1_T0_00601 за ціною від 541.30 грн до 945.77 грн
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PCDH20120CCG1_T0_00601 | Виробник : Panjit International Inc. |
 Description: DIODE ARR SIC 1200V 10A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 1495 шт: термін постачання 21-31 дні (днів) |
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PCDH20120CCG1_T0_00601 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 52A Max. forward impulse current: 720A Leakage current: 0.1mA Kind of package: tube Max. forward voltage: 2V Power dissipation: 167.8W |
товару немає в наявності |